Anode hole injection versus hydrogen release: The mechanism for gate oxide breakdown

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 27-32

  Wu, J ^a   Rosenbaum, E ^a   MacDonald, B ^b   Li, E ^a   Tao, J ^b   Tracy, B ^b   Fang, P ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANODES; ELECTRIC BREAKDOWN OF SOLIDS; HYDROGEN; OXIDES; RELIABILITY; SEMICONDUCTOR DEVICE MODELS;

ANODE HOLE INJECTION (AHI) MODELS;

GATES (TRANSISTOR);

EID: 0033742662     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2000.843887     Document Type: Article

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