An alternative interpretation of hot electron interface degradation in NMOSFET's: Isotope results irreconcilable with major defect generation by holes?

IEEE Transactions on Electron Devices

Volumn 46, Issue 9, 1999, Pages 1914-1916

  Hess, Karl ^a   Lee, Jinju ^a   Chen, Zhi ^a   Lyding, Joseph W ^a   Kim, Young Kwang ^b   Kim, Bong Seok ^b   Lee, Yong Hee ^b   Kim, Young Wug ^b   Suh, Kwang Pyuk ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b SAMSUNG Electronics   (South Korea)

Author keywords

CMOS; Deuterium; Hot carrier; Relizbility

Indexed keywords

CRYSTAL DEFECTS; DEGRADATION; DEUTERIUM; HOT CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SILICA;

HOT ELECTRON DEGRADATION;

MOSFET DEVICES;

EID: 0032595205     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.784195     Document Type: Article

References (13)

1. E. Takeda, C. Y. Yang, and A. Miura-Hamada, Hot Carrier Effects in MOS Devices. New York: Academic, 1995, pp. 73-130.
2. C. Hu, S. Tann, F. C. Hsu, P. K. Ko, and R. S. Muller, "Correlating the channel, substrate, gate and minority-carrier currents in MOSFET's," in Tech. Dig. IEEE Int. Solid-State Circuits Conf.
3. S. K. Lai, "Interface trap generation in Silicon dioxide when electrons are captured by trapped hole," J. Appl. Phys., vol. 54, pp. 2540-2546, 1983.
4. J. W. Lyding, K. Hess, and I. C. Kizilyalli, "Reduction of hot electron degradation in MOS transistors by deuterium processing," Appl. Phys. Lett., vol. 68, pp. 2526-2528, 1996.
5. K. Hess, I. C. Kizilyalli, and J. W. Lyding, "Giant isotope effect in hot electron degradation of metal oxide silicon devices," IEEE Trans. Electron Devices, vol. 45, pp. 406-416, 1998.
6. 2 and Its Interfaces, S. T. Pantelides, Ed. New York: Pergamon, 1978, pp. 227-231.
7. D. J. De Maria, E. Cartier, and D. Arnold, "Impact ionization, trap creation, degradation and breakdown in silicon dioxide films on silicon," J. Appl. Phys., vol. 73, pp. 3367-3384, 1993.
8. R. B. Fair and R. C. Sun, "Threshold-voltage instability in MOSFET's due to channel hot-hole emission," IEEE Trans. Electron Devices, vol. ED-28, pp. 83-94, 1981.
9. Z. Chen, private communication.
10. E. Rosenbaum, private communication.
11. J. Lee, J. Baker, R. Wilson, and J. W. Lyding, "Secondary ion mass spectrometry," in SIMS XI Proc., Orlando, FL, 1997, pp. 205-208.
12. J. Lee, S. Aur, R. Eklund, K. Hess, and J. W. Lyding, "SIMS characterization of deuterium sintering process for enhanced-lifetime CMOS transistors," J. Vac. Sci. technol. A, vol. 16, p. 1762, 1998.May/June 1998.
13. K. R. Mistry and B. Doyle, "AC versus DC hot-carrier degradation in n-channel MOSFET's," IEEE Trans. Electron Devices, vol. 40, pp. 96-104, 1995.