The relaxation phenomena of positive charges in thin gate oxide during fowler-nordheim tunneling stress

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1684-1689

  Chang, Kow Ming ^a,b   Li, Chii Horng ^a,b   Wang, Shih Wei ^a,b   Yeh, Ta Hsun ^a,b   Yang, Ji Yi ^a,b   Lee, Tzyh Cheang ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Fowler nordheim tunneling; Gate oxide; Positive charges; Stress

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; OXIDES; RELAXATION PROCESSES; SILICON WAFERS; STRESSES; TRANSIENTS;

CURRENT INJECTION; FOWLER-NORDHEIM TUNNELING; GATE OXIDE; STRESS VOLTAGE;

ELECTRIC CHARGE;

EID: 0032141841     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704365     Document Type: Article

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