Trends in copper precursor development for CVD and ALD applications

ECS Journal of Solid State Science and Technology

Volumn 4, Issue 1, 2015, Pages N3188-N3197

  Gordon, Peter G ^a   Kurek, Agnieszka ^a   Barry, Seán T ^a  

^a CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; COPPER; DECOMPOSITION; METALLIC FILMS; MICROELECTRONICS; SURFACE CHEMISTRY;

CHEMICAL VAPOR DEPOSITIONS (CVD); COPPER FILM DEPOSITION; COPPER PRECURSORS; DECOMPOSITION MECHANISM; DEPOSITION PROCESS; GAS-PHASE DEPOSITION; MICROELECTRONIC MANUFACTURING; PROCESS PARAMETERS;

CHEMICAL VAPOR DEPOSITION;

EID: 84990238166     PISSN: 21628769     EISSN: 21628777     Source Type: Journal    
DOI: 10.1149/2.0261501jss     Document Type: Article

References (61)

1. C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, IBM J. Res. Dev., 42, 567 (1998).
2. Y. Liu, J. Wang, L. Yin, P. Kondos, C. Parks, P. Borgesen, D. W. Henderson, S. Bliznakov, E. J. Cotts, and N. Dimitrov, Electron. Components Technol. Conf., 2105 (2008).
3. CRC Handbook of Chemistry and Physics; R. C. Weast, Ed. 49th ed. The Chemical Rubber Co., 1968; p. 2092.
4. International Technology Roadmap for Semiconductors http://www.itrs.net/Links/2013ITRS/Home2013.htm (accessed 2014).
5. D. Dobkin and M. K. Zuraw, Principles of Chemical Vapor Deposition; Springer, 2003; p. 273.
6. S. M. George, Chem. Rev., 111 (2010).
7. V. Miikkulainen, M. Leskelä, M. Ritala, and R. L. Puurunen, J. Appl. Phys., 113, 021301 (2013).
8. T. J. Knisley, L. C. Kalutarage, and C. H. Winter, Coord. Chem. Rev., 257, 3222 (2013).
9. D. J. Hagen, I. Povey, S. Rushworth, J. S. Wrench, L. Keeney, M. Schmidt, N. Petkov S.T. Barry, J. P. Coyle, and M. E. Pemble, J. Mater. Chem. C, 2, 9205 (2014).
10. B. H. Lee, J. K. Hwang, J. W. Nam, S. U. Lee, J. T. Kim, S.-M. Koo, A. Baunemann, R. A. Fischer, and M. M. Sung, Angew. Chemie, 121, 4606 (2009).
11. B. Vidjayacoumar, D. J. H. Emslie, S. B. Clendenning, J. M. Blackwell, J. F. Britten, and A. Rheingold, Chem. Mater., 22, 4844 (2010).
12. G. Dey and S. D. Elliott, J. Phys. Chem. A, 116, 8893 (2012).
13. E. S. Hwang and J. Lee, Chem. Mater., 12, 2076 (2000).
14. Y. K. Ko, B. S. Seo, D. S. Park, H. J. Yang, W. H. Lee, P. J. Reucroft, and J. G. Lee, Semicond. Sci. Technol., 17, 978 (2002).
15. Y. Au, Y. Lin, and R. G. Gordon, J. Electrochem. Soc., 158, D248 (2011).
16. O.-K. Kwon, H.-B. Lee, S.-W. Kang, and H.-S. Park, J. Vac. Sci. Technol. A, 20, 408 (2002).
17. D.-S. Lee and W.-J. Lee, Jpn. J. Appl. Phys., 48, 076004 (2009).
18. H. Park, A. Kim, C. Lee, J.-S. Lee, and J. Lee, Appl. Phys. Lett., 94, 213508 (2009).
19. O.-K. Kwon, J.-H. Kim, H.-S. Park, and S.-W. Kang, Electrochem. Solid-State Lett., 6, C109 (2003).
20. K.-C. Shim, H.-B. Lee, O.-K. Kwon, H.-S. Park, W. Koh, and S.-W. Kang, J. Electrochem. Soc., 149, G109 (2002).
21. D. Josell, D. Wheeler, and T. P. Moffat, Electrochem. Solid-State Lett., 5, C44 (2002).
22. C. Lampe-Önnerud, U. Jansson, A. Hârsta, and J. Carlsson, J. Cryst. Growth, 121, 223 (1992).
23. B. P. Mårtensson and J. Carlsson, Chem. Vap. Depos., 3, 45 (1997).
24. M. Juppo, M. Ritala, and M. Leskela, J. Vac. Sci. Technol. A Vacuum, Surfaces, Film., 15, 2330 (1997).
25. T. Törndahl, M. Ottosson, and J.-O. Carlsson, Thin Solid Films, 458, 129 (2004).
26. V. L. Young, D. F. Cox, and M. E. Davis, Chem. Mater., 1701 (1993).
27. P.-F. Hsu, Y. Chi, T.-W. Lin, C.-S. Liu, A. J. Carty, and S.-M. Peng, Chem. Vap. Depos., 10764, 28 (2001).
28. R. Becker, A. Devi, J. Weiß, U. Weckenmann, M. Winter, C. Kiener, H.-W. Becker, and R. A. Fischer, Chem. Vap. Depos., 9, 149 (2003).
29. D.-Y. Moon, D.-S. Han, S.-Y. Shin, J.-W. Park, B. M. Kim, and J. H. Kim, Thin Solid Films, 519, 3636 (2011).
30. T. J. Knisley, T. C. Ariyasena, T. Sajavaara, M. J. Saly, and C. H. Winter, Chem. Mater., 23, 4417 (2011).
31. G. Dey and S. D. Elliott, RSC Adv., 4, 34448 (2014).
32. L. C. Kalutarage, S. B. Clendenning, and C. H. Winter, Chem. Mater., 26, 3731 (2014).
33. B. S. Lim, A. Rahtu, and R. G. Gordon, Nat. Mater., 2, 749 (2003).
34. Z. Li, A. Rahtu, and R. G. Gordon, J. Electrochem. Soc., 153, C787 (2006).
35. V. V. Krisyuka, L. Alouia, N. Prrud'homme, B. Sarapata, F. Enocq, D. Samélora, and C. Vahlas, ECS Trans., 25, 581 (2009).
36. A. Turgambaeva, N. Prud'homme, V. Krisyuk, and C. Vahlas, J. Nanosci. Nanotechnol., 11, 8198 (2011).
37. Q. Ma, H. Guo, R. G. Gordon, and F. Zaera, Chem. Mater., 22, 352 (2010).
38. J. P. Coyle, W. H. Monillas, G. P. A. Yap, and S. T. Barry, Inorg. Chem., 47, 683 (2008).
39. L. Shao, J. P. Coyle, S. T. Barry, and J. Albert, Opt. Mater. Express, 1, 814 (2011).
40. J. P. Coyle, P. Johnson, G. DiLabio, S. T. Barry, and J. Müller, Inorg. Chem., 49, 2844 (2010).
41. J. P. Coyle, P. J. Pallister, A. Kurek, E. R. Sirianni, G. P. A. Yap, and S. T. Barry, Inorg. Chem., 52, 910 (2013).
42. P. Doppelt, Coord. Chem. Rev., 180, 1785 (1998).
43. J. Rickerby and J. H. G. Steinke, Chem. Rev., 102, 1525 (2002).
44. G. S. Girolami, P. M. Jeffries, and L. H. Dubois, J. Am. Chem. Soc., 115, 1015 (1993).
45. M. E. Gross, J. Electrochem. Soc., 138, 2422 (1991).
46. M. Utriainen, M. Kroger-Laukkanen, L.-S. Johansson, and L. Niinisto, Appl. Surf. Sci., 157, 151 (2000).
47. A. Niskanen, A. Rahtu, T. Sajavaara, K. Arstila, M. Ritala, and M. Leskelä, J. Electrochem. Soc., 152, G25 (2005).
48. L. Wua and E. Eisenbraun, J. Vac. Sci. Technol. B, 25, 2581 (2007).
49. P. Mårtenson and Carlsson. Jan-Oto, J. Electrochem. Soc., 145, 5 (1998).
50. A. U. Mane and S. A. Shivashankar, Mater. Sci. Semicond. Process., 7, 343 (2004).
51. R. Gupta and B. G. Willis, Appl. Phys. Lett., 90, 253102 (2007).
52. I. J. Hsu, B. E. McCandless, C. Weiland, and B. G. Willis, J. Vac. Sci. Technol. A, 27, 660 (2009).
53. C. Jezewski, W. A. Lanford, C. J. Wiegand, J. P. Singh, P.-I. Wang, J. J. Senkevich, and T.-M. Lu, J. Electrochem. Soc., 152, C60 (2005).
54. R. Solanki and B. Pathangey, Electrochem. Solid-State Lett., 3, 479 (2000).
55. S.-W. Kang, J.-Y. Yun, and Y. H. Chang, Chem. Mater., 22, 1607 (2010).
56. D. Moon, W. Kim, T. Kim, B. Kang, J. Park, S. J. Yeom, and J. H. Kim, J. Korean Phys. Soc., 54, 1330 (2009).
57. J. A. T. Norman, B. A. Muratore, P. N. Dyer, D. A. Roberts, and A. K. Hochberg, Le J. Phys. IV, 02, C2 (1991).
58. B. H. Lee, J. K. Hwang, J. W. Nam, S. U. Lee, J. T. Kim, S.-M. Koo, A. Baunemann, R. A. Fischer, and M. M. Sung, Angew. Chemie, 121, 4606 (2009).
59. K.-H. Park, A. Z. Bradley, J. S. Thompson, and W. J. Marshall, Inorg. Chem., 45, 8480 (2006).
60. J. P. Coyle, G. Dey, E. R. Sirianni, M. L. Kemell, G. P. A. Yap, M. Ritala, M. Leskelä, S. D. Elliott, and S. T. Barry, Chem. Mater., 25, 1132 (2013).
61. A. M. James, R. K. Laxman, F. R. Fronczek, and A. W. Maverick, Inorg. Chem., 37, 3785 (1998).