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Journal of the Electrochemical Society

Volumn 158, Issue 5, 2011, Pages

Filling narrow trenches by iodine-catalyzed CVD of copper and manganese on manganese nitride barrier/adhesion layers

(3) Au, Yeung a Lin, Youbo a Gordon, Roy G a

a HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER PROPERTIES; BOTTOM-UP FILLING; COPPER DIFFUSION; COPPER LAYER; DIELECTRIC INSULATORS; IODINE ATOMS; MANGANESE NITRIDES; MICRO-ELECTRONIC DEVICES; NANOSCALE INTERCONNECTS; ORDER OF MAGNITUDE; POST DEPOSITION ANNEALING; PURE COPPER; SELF-ALIGNED; SUB-100 NM; UNDERLAYERS; VOID-FREE;

ADHESION; ALLOYS; ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; FILLING; GRAIN BOUNDARIES; INDUSTRIAL CHEMICALS; IODINE; MANGANESE; MICROELECTRONICS; NITRIDES; SURFACE ACTIVE AGENTS;

COPPER;

EID: 79953202190 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3556699 Document Type: Article

Times cited : (52)

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