Atomic layer chemical vapour deposition of copper

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 343-347

  Mane, Anil U ^a,b   Shivashankar, S A ^a,b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b IHP   (Germany)

Author keywords

ALD; Copper; (111) texture; Cu(thd)2; Morphology; TEM

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTEGRATED CIRCUITS; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYERS; COPPER GRAINS; DEPOSITION TEMPERATURE; FILM THICKNESS;

COPPER;

EID: 9544254873     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.094     Document Type: Conference Paper

References (11)

1. Vaidya S, Sinha AK. Thin Solid Films 1981;75:253.
2. Kurd JL, Rodbell KP, Gignac LM, Clevenger LA, Iggulden RC, Schnabel RF, Weber SJ, Schmidt NH. Appl Phys Lett 1998;72:326.
3. Tracy DP, Knorr DB, Rodbell KP. J Appl Phys 1994;76:2671.
4. Huang H, Gilmer GH, Diaz de la Rubia T. J Appl Phys 1998;84:3636.
5. Nucci JA, Keller RR, Sanchez Jr. JE, Diamand YS. Appl Phys Lett 1996;69:4017.
6. Mårtensson P, Carlsson J-O. J Electrochem Soc 1998; 145:2926.
7. Solanki R, Pathangey B. Electrochem Solid-State Lett 2000;3:479.
8. Mane AU. Atomic Layer Deposition (ALD) and Metalorganic Chemical Vapour Deposition (MOCVD) of Metals and Metal Oxides, Ph.D. Thesis, Indian Institute of Science, Bangalore, India, 2003.
9. Smith HI, Flanders DC. Appl Phys Lett 1978;32:349.
10. Yoon JG, Oh HK, Lee SJ. Phy Rev 1999;B60:2839.
11. Mane AU, Shivashankar SA. J Cryst Growth 2003; 254:368.