Formation of Cu nanocrystals on 3-mercaptopropyltrimethoxysilane monolayer by pulsed iodine-assisted chemical vapor deposition for nonvolatile memory applications

Applied Physics Letters

Volumn 94, Issue 21, 2009, Pages

  Park, Heejung ^a   Kim, Ara ^a   Lee, Chiyoung ^a   Lee, Jang Sik ^a   Lee, Jaegab ^a  

^a Kookmin University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

3-MERCAPTOPROPYLTRIMETHOXYSILANE; CHARGE STORAGE; CU ATOMS; CU NANOPARTICLES; DATA RETENTION; NANOCRYSTAL FLASH MEMORY; NON-VOLATILE; NON-VOLATILE MEMORY APPLICATION; NOVEL DEVICES; PULSED CVD; THRESHOLD VOLTAGE SHIFTS; VOLTAGE PULSE;

CHEMICAL ELEMENTS; FLASH MEMORY; INDUSTRIAL CHEMICALS; IODINE; MONOLAYERS; NANOCRYSTALS; NONVOLATILE STORAGE; SILANES; THRESHOLD VOLTAGE; VAPORS;

CHEMICAL VAPOR DEPOSITION;

EID: 66549092270     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3139072     Document Type: Article

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