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Volumn 17, Issue 9, 2002, Pages 978-982
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Additive vapour effect on the conformal coverage of a high aspect ratio trench using MOCVD copper metallization from (hfac)Cu(DMB) precursor
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Author keywords
[No Author keywords available]
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Indexed keywords
ADDITIVES;
ASPECT RATIO;
METALLIC FILMS;
METALLIZING;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MORPHOLOGY;
SILICON WAFERS;
SUBSTRATES;
SUBMICRON-LEVEL TRENCHES;
FILM PREPARATION;
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EID: 0036714064
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/17/9/314 Document Type: Article |
Times cited : (9)
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References (15)
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