Additive vapour effect on the conformal coverage of a high aspect ratio trench using MOCVD copper metallization from (hfac)Cu(DMB) precursor

Semiconductor Science and Technology

Volumn 17, Issue 9, 2002, Pages 978-982

  Ko, Y K ^a   Seo, B S ^a   Park, D S ^a   Yang, H J ^a   Lee, W H ^a,c   Reucroft, P J ^b   Lee, J G ^a  

^a Kookmin University   (South Korea)

^b UNIVERSITY OF KENTUCKY   (United States)

^c Sejong University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ASPECT RATIO; METALLIC FILMS; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SILICON WAFERS; SUBSTRATES;

SUBMICRON-LEVEL TRENCHES;

FILM PREPARATION;

EID: 0036714064     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/9/314     Document Type: Article

References (15)