Low temperature growth of high purity, low resistivity copper films by atomic layer deposition

Chemistry of Materials

Volumn 23, Issue 20, 2011, Pages 4417-4419

  Knisley, Thomas J ^a   Ariyasena, Thiloka C ^a   Sajavaara, Timo ^b   Saly, Mark J ^c   Winter, Charles H ^a  

^a WAYNE STATE UNIVERSITY   (United States)

^b UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^c SAFC Hitech   (United Kingdom)

Author keywords

atomic layer deposition; copper; precursor; thin films

Indexed keywords

ALD GROWTH; COPPER FILMS; COPPER METAL FILMS; HIGH PURITY; LOW RESISTIVITY; LOW TEMPERATURE GROWTH; LOW TEMPERATURES; NATIVE OXIDES; PRECURSOR; SEM IMAGE; SI (100) SUBSTRATE;

ATOMIC LAYER DEPOSITION; ATOMS; CARBON DIOXIDE; COPPER; FORMIC ACID; HYDRAZINE; METALLIC FILMS; OXIDE FILMS; RUTHENIUM;

FILM GROWTH;

EID: 80054743474     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm202475e     Document Type: Article

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