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Volumn 14, Issue 10, 2011, Pages

Improving resistance switching characteristics with SiGeO x/SiGeON double layer for nonvolatile memory applications

(9) Syu, Yong En a Chang, Ting Chang a,b Tsai, Chih Tsung a,b Chang, Geng Wei c Tsai, Tsung Ming a Chang, Kuan Chang a Tai, Ya Hsiang c Tsai, Ming Jinn d Sze, Simon M e

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c Institute of Electro Optical Engineering (Taiwan)

d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

e NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODE ELECTRODES; DOUBLE LAYERS; ELECTRICAL CHARACTERISTIC; MEMORY CELL; MEMORY SWITCHING; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; RESISTANCE SWITCHING;

SEMICONDUCTOR STORAGE; TITANIUM NITRIDE;

SWITCHING;

EID: 80051610834 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3615823 Document Type: Article

Times cited : (10)

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