Silicon introduced effect on resistive switching characteristics of WO X thin films

Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

  Syu, Yong En ^a   Chang, Ting Chang ^a,b   Tsai, Tsung Ming ^a   Chang, Geng Wei ^c   Chang, Kuan Chang ^a   Tai, Ya Hsiang ^c   Tsai, Ming Jinn ^d   Wang, Ying Lang ^e   Sze, Simon M ^a,c,f  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^e TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^f Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONDUCTION PATHS; ELECTRICAL CHARACTERISTIC; FORMING PROCESS; OXIDATION STATE; RESISTANCE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; RESISTIVE SWITCHING; THERMAL OXIDATION PROCESS; TUNGSTEN FILAMENTS;

METALLIC COMPOUNDS; MOS DEVICES; OXIDE FILMS; SILICON COMPOUNDS; SILICON OXIDES; SWITCHING; TUNGSTEN;

RANDOM ACCESS STORAGE;

EID: 84862957028     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3676194     Document Type: Article

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