Cycle-to-cycle intrinsic RESET statistics in HfO2-based unipolar RRAM devices

IEEE Electron Device Letters

Volumn 34, Issue 5, 2013, Pages 623-625

  Long, Shibing ^a   Lian, Xiaojuan ^b   Ye, Tianchun ^a   Cagli, Carlo ^d   Perniola, Luca ^c   Miranda, Enrique ^b   Liu, Ming ^a   Sune, Jordi ^b  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c CEA GRENOBLE   (France)

^d NONE

Author keywords

RESET statistics; resistive random access memory (RRAM); resistive switching (RS)

Indexed keywords

CONDUCTIVE FILAMENTS; INITIAL RESISTANCE; ON-STATE RESISTANCE; RESET CURRENTS; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; STATISTICAL DATAS; THERMAL DISSOLUTION;

HAFNIUM OXIDES; NICKEL OXIDE;

WEIBULL DISTRIBUTION;

EID: 84876966134     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2251314     Document Type: Article

References (13)

1. R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-nanoionic mechanisms, prospects, and challenges," Adv. Mater., vol. 21, nos. 25-26, pp. 2632-2663, Jul. 2009.
2. H. Akinaga and H. Shima, "Resistive random access memory ReRAM based on metal oxides," Proc. IEEE, vol. 98, no. 12, pp. 2237-2251, Dec. 2010.
3. G. W. Burr, B. N. Kurdi, J. C. Scott, C. H. Lam, K. Gopalakrishnan, and R. S. Shenoy, "Overview of candidate device technologies for storageclass memory," IBM J. Res. Develop., vol. 52, nos. 4-5, pp. 449-464, Jul.-Sep. 2008.
4. D. S. Jeong, R. Thomas, R. S. Katiyar, J. F. Scott, H. Kohlstedt, A. Petraru, and C. S. Hwang, "Emerging memories: Resistive switching mechanisms and current status," Rep. Progr. Phys., vol. 75, no. 7, p. 076502, Jun. 2012.
5. Y. Wang, Q. Liu, S. Long, W. Wang, Q. Wang, M. Zhang, S. Zhang, Y. Li, Q. Zuo, J. Yang, and M. Liu, "Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications," Nanotechnology, vol. 21, no. 4, p. 45202, Jan. 2010.
6. H. Y. Lee, Y. S. Chen, P. S. Chen, P. Y. Gu, Y. Y. Hsu, S. M. Wang, W. H. Liu, C. H. Tsai, S. S. Sheu, P. C. Chiang, W. P. Lin, C. H. Lin, W. S. Chen, F. T. Chen, C. H. Lien, and M. J. Tsai, "Evidence and solution of over-RESET problem for HfOX based resistive memory with sub-ns switching speed and high endurance," in Proc. IEEE Int. Electron Devices Meeting, Dec. 2010, pp. 19.7.1-19.7.4.
7. J. Lee, J. Shin, D. Lee, W. Lee, S. Jung, M. Jo, J. Park, K. P. Biju, S. Kim, S. Park, and H. Hwang, "Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications," in Proc. IEEE Int. Electron Devices Meeting, Dec. 2010, pp. 452-455.
8. C. Cagli, J. Buckley, V. Jousseaume, A. Salaun, H. Grampeix, J. F. Nodin, H. Feldis, A. Persico, P. Lorenzi, L. Massari, R. Rao, F. Irrera, T. Cabout, F. Aussenac, C. Carabasse, M. Coue, L. Perniola, P. Blaise, F. Zheng, Y. H. Yu, G. Ghibaudo, D. Deleruyelle, M. Bocquet, C. Müller, A. Padovani, O. Pirrotta, L. Vandelli, L. Larcher, G. Reimbold, and B. de Salvo, "Experimental and theoretical study of electrode effects in HfO2 based RRAM," in Proc. IEEE Int. Electron Devices Meeting, Dec. 2011, pp. 28.7.1-28.7.4.
9. X. Guan, S. Yu, and H. S. P. Wong, "On the switching parameter variation of metal-oxide RRAM-Part I: Physical modeling and simulation methodology," IEEE Trans. Electron Devices, vol. 59, no. 4, pp. 1172-1182, Apr. 2012.
10. S. Long, C. Cagli, D. Ielmini, M. Liu, and J. Sune, "Reset statistics of NiO-based resistive switching memories," IEEE Electron Device Lett., vol. 32, no. 11, pp. 1570-1572, Nov. 2011.
11. S. Long, C. Cagli, D. Ielmini, M. Liu, and J. Sune, "Analysis and modeling of resistive switching statistics," J. Appl. Phys., vol. 111, no. 7, pp. 074508-1-074508-19, Apr. 2012.
12. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, "Self-accelerated thermal dissolution model for reset programming in unipolar resistiveswitching memory RRAM devices," IEEE Trans. Electron Devices, vol. 56, no. 2, pp. 193-200, Feb. 2009.
13. D. Ielmini, C. Cagli, and F. Nardi, "Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories," Nanotechnology, vol. 22, no. 25, p. 254022, Feb. 2011.