SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 101, Issue 1, 2012, Pages

Nonlinear conductance quantization effects in CeO x/SiO 2-based resistive switching devices

(6) Miranda, E a Kano, S b Dou, C b Kakushima, K b Sue J a Iwai, H b

a UNIVERSITAT AUTÒNOMA DE BARCELONA (Spain)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE VALUES; CONDUCTION MODE; CROSS-SECTION AREA; ELECTRON CHARGE; ELECTRON TRANSPORT; INTEGER VALUES; LANDAUER FORMULA; LOW-RESISTANCE STATE; NONLINEAR CONDUCTANCE; NONLINEAR CONDUCTION; PLANCK CONSTANTS; QUANTUM UNITS; RESISTIVE SWITCHING; SI SUBSTRATES; VOLTAGE DROP;

QUANTUM CHEMISTRY;

SWITCHING SYSTEMS;

EID: 84863687001 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4733356 Document Type: Article

Times cited : (44)

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