Experimental and theoretical study of electrode effects in HfO 2 based RRAM

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Cagli, C ^a   Buckley, J ^a   Jousseaume, V ^a   Cabout, T ^a   Salaun, A ^a   Grampeix, H ^a   Nodin, J F ^a   Feldis, H ^a   Persico, A ^a   Cluzel, J ^a   Lorenzi, P ^f   Massari, L ^f   Rao, R ^f   Irrera, F ^f   Aussenac, F ^a   Carabasse, C ^a   Coue, M ^a   Calka, P ^a   Martinez, E ^a   Perniola, L ^a   Blaise, P ^a   Fang, Z ^b   Yu, Y H ^b   Ghibaudo, G ^c   Deleruyelle, D ^d   Bocquet, M ^d   Muller C ^d   Padovani, A ^e   Pirrotta, O ^e   Vandelli, L ^e   Larcher, L ^e   Reimbold, G ^a   De Salvo, B ^a   more..

^a CEA LETI   (France)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c MINATEC   (France)

^d AIX MARSEILLE UNIVERSITÉ   (France)

^e UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^f SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; CONDUCTIVE FILAMENTS; ELECTRICAL CHARACTERIZATION; ELECTRODE EFFECTS; INTERFACIAL LAYER; PHYSICO-CHEMICAL MEASUREMENTS; SWITCHING VOLTAGES; THEORETICAL STUDY; TI ELECTRODE; TIN AND TI;

ELECTRODES; ELECTRON DEVICES; PLATINUM; TITANIUM NITRIDE;

HAFNIUM OXIDES;

EID: 84856997746     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131634     Document Type: Conference Paper

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