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Volumn 3, Issue 4, 2011, Pages 1504-1507
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From stochastic single atomic switch to nanoscale resistive memory device
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC SWITCHES;
CURRENT INDUCED SWITCHING;
IONIC CONDUCTOR;
MEMORY DEVICE;
NANO SCALE;
NANO-SWITCHES;
NANOMETRES;
NANOSCALE CHANNELS;
NANOSCALE JUNCTIONS;
SILVER FILM;
SURFACE LAYERS;
SWITCHING BEHAVIORS;
SWITCHING CHARACTERISTICS;
SWITCHING VOLTAGES;
TUNGSTEN TIP;
IONIC CONDUCTIVITY;
LITHOGRAPHY;
NANOSTRUCTURED MATERIALS;
SILVER;
SWITCHING;
TUNGSTEN;
CURRENT VOLTAGE CHARACTERISTICS;
SILVER;
ARTICLE;
CHEMISTRY;
ELECTRIC CONDUCTIVITY;
EQUIPMENT;
EQUIPMENT DESIGN;
INSTRUMENTATION;
MICROELECTRODE;
NANOTECHNOLOGY;
SIGNAL PROCESSING;
STATISTICS;
ELECTRIC CONDUCTIVITY;
EQUIPMENT DESIGN;
EQUIPMENT FAILURE ANALYSIS;
MICROELECTRODES;
NANOTECHNOLOGY;
SIGNAL PROCESSING, COMPUTER-ASSISTED;
SILVER;
STOCHASTIC PROCESSES;
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EID: 79953736382
PISSN: 20403364
EISSN: 20403372
Source Type: Journal
DOI: 10.1039/c0nr00951b Document Type: Article |
Times cited : (28)
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References (22)
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