On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, Monte Carlo simulation, and experimental characterization

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Yu, Shimeng ^a   Guan, Ximeng ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CONDUCTIVE FILAMENTS; CURRENT FLUCTUATIONS; DEVICE STRUCTURES; EXPERIMENTAL CHARACTERIZATION; EXPERIMENTAL DATA; HIGH-RESISTANCE STATE; IV CHARACTERISTICS; METAL OXIDES; MONTE CARLO SIMULATION; PHYSICAL MODELING; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; STOCHASTIC FORMATION; STOCHASTIC NATURE; SWITCHING PARAMETERS; TUNNELING GAP; WAVE FORMS; WIDE SPREADS;

ELECTRON DEVICES; METALLIC COMPOUNDS; MODELS; MONTE CARLO METHODS; POWER QUALITY; STOCHASTIC SYSTEMS; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 84856999285     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131572     Document Type: Conference Paper

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