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Advanced Materials

Volumn 21, Issue 30, 2009, Pages 3099-3104

Low-temperature solution-processed memory transistors based on zinc oxide nanoparticles

(6) Faber, Hendrik a Burkhardt, Martin a Jedaa, Abdesselam a Kälblein, Daniel b Klauk, Hagen b Halik, Marcus a

a UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AIR STABLE; AMBIENT AIR; BOTTOM GATE; LARGE BAND; LOW TEMPERATURES; MEMORY EFFECTS; MEMORY TRANSISTORS; N-CHANNEL; NON-VOLATILE; NON-VOLATILE MEMORY TRANSISTORS; POSITIVE CHARGES; SHELF LIFE; SOLUTION-PROCESSED; THERMALLY OXIDIZED SILICON; TOP GATE; VOLTAGE-CONTROLLED; ZINC OXIDE NANOPARTICLES; ZNO;

ATOMIC FORCE MICROSCOPY; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; NANOPARTICLES; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 69249142820 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200900440 Document Type: Article

Times cited : (114)

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