SCOPUS 정보 검색 플랫폼

Volumn 21, Issue 43, 2011, Pages 17066-17070

Chemically improved high performance printed indium gallium zinc oxide thin-film transistors

(8) Jeong, Sunho a Lee, Ji Yoon a Lee, Sun Sook a Oh, Se Wook b Lee, Hyun Ho b Seo, Yeong Hui a Ryu, Beyong Hwan a Choi, Youngmin a

a Korea Research Institute of Chemical Technology (South Korea)

b Myong Ji University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PERFORMANCE; FIELD-EFFECT; INDIUM GALLIUM ZINC OXIDES; OPTIMAL COMPOSITION; PRECURSOR SOLUTIONS; SATURATION MOBILITY; SEMICONDUCTING LAYER; SOURCE/DRAIN ELECTRODES;

ETHYLENE; ETHYLENE GLYCOL; INDIUM; TRANSISTORS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 80054892850 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm13767k Document Type: Article

Times cited : (58)

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