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Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

(5) Lee, Sang Yeol a Kim, Do Hyung a,b Chong, Eugene a Jeon, Yong Woo c Kim, Dae Hwan c

a Korea Institute of Science and Technology (South Korea)

b Dongguk University (South Korea)

c Kookmin University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CHANNEL THICKNESS; CHARGE TRAPPING MECHANISMS; DENSITY OF STATE; FALLING-RATE; MULTIFREQUENCY METHOD; POSITIVE GATE BIAS; RF MAGNETRONS; ROOM TEMPERATURE; THRESHOLD VOLTAGE SHIFTS;

ACTIVATION ENERGY; AMORPHOUS FILMS; MAGNETRONS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

FILM THICKNESS;

EID: 79953844973 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3570641 Document Type: Article

Times cited : (125)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.