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Journal of Materials Chemistry

Volumn 19, Issue 46, 2009, Pages 8881-8886

Solution processed invisible all-oxide thin film transistors

(6) Song, Keunkyu a Kim, Dongjo a Li, Xiang Shu b Jun, Taewhan a Jeong, Youngmin a Moon, Jooho a

a Yonsei University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL ELECTRODE; BUILDING BLOCKES; ELECTRICAL CONTACTS; ELECTRICAL PROPERTY; INK-JET; OXIDE ELECTRODES; OXIDE MATERIALS; OXIDE SEMICONDUCTOR; OXIDE THIN FILMS; SELECTIVE DOPING; SOLUTION-PROCESSED; TRANSPARENT ELECTRONICS; TRANSPARENT SOLUTIONS; ZINC INDIUM OXIDE; ZINC TIN OXIDE; ZNO; ZNO-BASED TFT;

CONTACTS (FLUID MECHANICS); ELECTRIC PROPERTIES; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM TRANSISTORS; TIN; VACUUM APPLICATIONS; ZINC; ZINC OXIDE;

SEMICONDUCTING INDIUM;

EID: 70450158541 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/b912554j Document Type: Article

Times cited : (95)

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