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Journal of Materials Chemistry

Volumn 22, Issue 12, 2012, Pages 5390-5397

High performance and high stability low temperature aqueous solution-derived Li-Zr co-doped ZnO thin film transistors

(5) Jung, Yangho a,b Yang, Wooseok a Koo, Chang Young a,c Song, Keunkyu a,b Moon, Jooho a

a Yonsei University (South Korea)

b SAMSUNG Electronics (South Korea)

c INOSTEK Inc (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS OXIDE SEMICONDUCTORS; CO-DOPED; CO-DOPED ZNO; CO-DOPING; DEFECT SITES; DEVICE MOBILITIES; FILM QUALITY; HIGH STABILITY; LOW TEMPERATURES; MOBILITY PERFORMANCE; NEGATIVE BIAS; NON-DOPED; ON/OFF CURRENT RATIO; OXIDE SEMICONDUCTOR; OXYGEN BONDING; POSITIVE BIAS; SOLUTION-PROCESSED; THRESHOLD VOLTAGE SHIFTS; ZNO;

ANNEALING; OXIDE FILMS; SOLUTIONS; TEMPERATURE; THIN FILM TRANSISTORS; TRANSISTORS; ZINC OXIDE; ZIRCONIUM;

DOPING (ADDITIVES);

EID: 84863261606 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm15526e Document Type: Article

Times cited : (85)

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