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Journal of Materials Chemistry

Volumn 21, Issue 4, 2011, Pages 1102-1108

High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

(7) Jun, Taehwan a Song, Keunkyu a Jeong, Youngmin a Woo, Kyoohee a Kim, Dongjo a Bae, Changdeuck a Moon, Jooho a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AIR STABILITY; AMMONIUM HYDROXIDE SOLUTION; DEHYDROXYLATIONS; DEVICE CHARACTERISTICS; HIGH PERFORMANCE APPLICATIONS; INORGANIC PRECURSOR; LOW TEMPERATURES; MICROWAVE-ASSISTED; ON/OFF CURRENT RATIO; ORGANIC SEMICONDUCTOR; OXIDE SEMICONDUCTOR; PROCESSABLE; SEMICONDUCTING LAYER; SOLUTION-PROCESSED; TRANSPARENT THIN FILM TRANSISTOR; ZINC HYDROXIDE; ZNO;

AMMONIUM COMPOUNDS; AMORPHOUS FILMS; AMORPHOUS SILICON; DISSOLUTION; IRRADIATION; MICROWAVE IRRADIATION; SPECTROSCOPIC ANALYSIS; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78651401697 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c0jm02178d Document Type: Article

Times cited : (163)

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