SCOPUS 정보 검색 플랫폼

Volumn 520, Issue 5, 2011, Pages 1608-1611

Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors

(9) Chang, Geng Wei a Chang, Ting Chang b Syu, Yong En b Tsai, Tsung Ming c Chang, Kuan Chang c Tu, Chun Hao a Jian, Fu Yen b Hung, Ya Chi c Tai, Ya Hsiang a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

c NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

Indium Gallium Zinc Oxide (IGZO); Passivation layer; Thin film transistors (TFTs)

Indexed keywords

AMBIENT GAS; BOTTOM GATE; BULK TRAPS; ELECTRICAL CHARACTERISTIC; HIGH YIELD; INDIUM GALLIUM ZINC OXIDES; LOW COSTS; PASSIVATION LAYER; POSITIVE GATE BIAS; PROCESS TECHNOLOGIES; THIN FILM TRANSISTORS (TFTS); TOTAL DENSITY OF STATE;

AMORPHOUS FILMS; GELS; INDIUM; MANUFACTURE; PARAFFIN WAXES; PARAFFINS; PASSIVATION; SOL-GEL PROCESS; SOL-GELS; SOLS; TRANSISTORS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 82755189418 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.08.104 Document Type: Conference Paper

Times cited : (19)

References (20)

1
- 33748795083
- H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, K. Nomura, T. Kamiya, and H. Hosono Appl. Phys. Lett. 89 2006 112123
- (2006) Appl. Phys. Lett. , vol.89 , pp. 112123
- Yabuta, H.¹ Sano, M.² Abe, K.³ Aiba, T.⁴ Den, T.⁵ Nomura, K.⁶ Kamiya, T.⁷ Hosono, H.⁸

2
- 77956175773
- Y.H. Yang, S.S. Yang, and K.S. Chou IEEE Electron Device Lett. 31 9 2010 969
- (2010) IEEE Electron Device Lett. , vol.31 , Issue.9 , pp. 969
- Yang, Y.H.¹ Yang, S.S.² Chou, K.S.³

3
- 77956811460
- T.C. Chen, T.C. Chang, C.T. Tsai, T.Y. Hsieh, S.C. Chen, C.S. Lin, M.C. Hung, C.H. Tu, J.J. Chang, P.L. Chen, Appl. Phys. Lett. 97 (2010) 112104.
- (2010) Appl. Phys. Lett. , vol.97 , pp. 112104
- Chen, T.C.¹ Chang, T.C.² Tsai, C.T.³ Hsieh, T.Y.⁴ Chen, S.C.⁵ Lin, C.S.⁶ Hung, M.C.⁷ Tu, C.H.⁸ Chang, J.J.⁹ Chen, P.L.¹⁰

4
- 77949731627
- S.Y. Sung, J.H. Choi, U.B. Han, K.C. Lee, J.H. Lee, J.H. Lee, J.J. Kim, W. Lim, S.J. Pearton, D.P. Norton, and Y.W. Heo Appl. Phys. Lett. 96 2010 102107
- (2010) Appl. Phys. Lett. , vol.96 , pp. 102107
- Sung, S.Y.¹ Choi, J.H.² Han, U.B.³ Lee, K.C.⁴ Lee, J.H.⁵ Lee, J.H.⁶ Kim, J.J.⁷ Lim, W.⁸ Pearton, S.J.⁹ Norton, D.P.¹⁰ Heo, Y.W.¹¹

5
- 77955574457
- D. Choi, D. Wang, I.T. Bae, J. Xiao, Z. Nie, W. Wang, V.V. Viswanathan, Y.J. Lee, J.G. Zhang, G.L. Graff, Z. Yang, and J. Liu Nano Lett. 10 2010 2799
- (2010) Nano Lett. , vol.10 , pp. 2799
- Choi, D.¹ Wang, D.² Bae, I.T.³ Xiao, J.⁴ Nie, Z.⁵ Wang, W.⁶ Viswanathan, V.V.⁷ Lee, Y.J.⁸ Zhang, J.G.⁹ Graff, G.L.¹⁰ Yang, Z.¹¹ Liu, J.¹²

6
- 34249697083
- M. Kim, J.H. Jeong, H.J. Lee, T.K. Ahn, H.S. Shin, J.S. Park, J.K. Jeong, Y.G. Mo, and H.D. Kim Appl. Phys. Lett. 90 2007 212114
- (2007) Appl. Phys. Lett. , vol.90 , pp. 212114
- Kim, M.¹ Jeong, J.H.² Lee, H.J.³ Ahn, T.K.⁴ Shin, H.S.⁵ Park, J.S.⁶ Jeong, J.K.⁷ Mo, Y.G.⁸ Kim, H.D.⁹

7
- 5344238791
- R.A. MacPhail, H.L. Strauss, R.G. Snyder, and C.A. Elliger J. Phys. Chem. 88 1984 334
- (1984) J. Phys. Chem. , vol.88 , pp. 334
- MacPhail, R.A.¹ Strauss, H.L.² Snyder, R.G.³ Elliger, C.A.⁴

8
- 0030289273
- D. Biily Yang, and Wakamatsu Tomoyo Surf. Interface Anal. 24 1996 803
- (1996) Surf. Interface Anal. , vol.24 , pp. 803
- Biily Yang, D.¹ Tomoyo, W.²

9
- 13244267271
- D. Atek, and N. Belhaneche-Bensemra Eur. Polym. J. 41 2005 707
- (2005) Eur. Polym. J. , vol.41 , pp. 707
- Atek, D.¹ Belhaneche-Bensemra, N.²

10
- 0000995423
- J.F. Rabolt, F.C. Burns, N.E. Schlotter, and J.D. Swalen J. Phys. Chem. 78 1984 946
- (1984) J. Phys. Chem. , vol.78 , pp. 946
- Rabolt, J.F.¹ Burns, F.C.² Schlotter, N.E.³ Swalen, J.D.⁴

11
- 33846070644
- R.B.M. Cross, and M.M. De Souza Appl. Lett. 89 2006 263513
- (2006) Appl. Lett. , vol.89 , pp. 263513
- Cross, R.B.M.¹ De Souza, M.M.²

12
- 37549040163
- Y. Vygranenko, K. Wang, and A. Nathan Appl. Phys. Lett. 91 2007 263508
- (2007) Appl. Phys. Lett. , vol.91 , pp. 263508
- Vygranenko, Y.¹ Wang, K.² Nathan, A.³

13
- 38549145327
- A. Suresh, and J.F. Muth Appl. Phys. Lett. 92 2008 033502
- (2008) Appl. Phys. Lett. , vol.92 , pp. 033502
- Suresh, A.¹ Muth, J.F.²

14
- 67650474594
- K. Nomura, T. Kamiya, M. Hirano, and H. Hosono Appl. Phys. Lett. 95 2009 013502
- (2009) Appl. Phys. Lett. , vol.95 , pp. 013502
- Nomura, K.¹ Kamiya, T.² Hirano, M.³ Hosono, H.⁴

15
- 57049096959
- C.F. Huang, C.Y. Peng, Y.J. Yang, H.C. Sun, H.C. Chang, P.S. Kuo, H.L. Chang, C.Z. Liu, and C.W. Liu IEEE Electron Device Lett. 29 2008 1332
- (2008) IEEE Electron Device Lett. , vol.29 , pp. 1332
- Huang, C.F.¹ Peng, C.Y.² Yang, Y.J.³ Sun, H.C.⁴ Chang, H.C.⁵ Kuo, P.S.⁶ Chang, H.L.⁷ Liu, C.Z.⁸ Liu, C.W.⁹

16
- 39749191514
- J.S. Park, J.K. Jeong, H.J. Chung, Y.G. Mo, and H.D. Kim Appl. Phys. Lett. 92 2008 072104
- (2008) Appl. Phys. Lett. , vol.92 , pp. 072104
- Park, J.S.¹ Jeong, J.K.² Chung, H.J.³ Mo, Y.G.⁴ Kim, H.D.⁵

17
- 49249142162
- N. Yamazoe, J. Fuchigami, M. Kishikawa, and T. Seiyama Surf. Sci. 96 1979 335
- (1979) Surf. Sci. , vol.96 , pp. 335
- Yamazoe, N.¹ Fuchigami, J.² Kishikawa, M.³ Seiyama, T.⁴

18
- 36049015883
- P. Görrn, M. Lehnhardt, T. Riedl, and W. Kowalsky Appl. Phys. Lett. 91 2007 193504
- (2007) Appl. Phys. Lett. , vol.91 , pp. 193504
- Görrn, P.¹ Lehnhardt, M.² Riedl, T.³ Kowalsky, W.⁴

19
- 77955655326
- Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao Solid-State Electron. 54 2010 1392
- (2010) Solid-State Electron. , vol.54 , pp. 1392
- Kamada, Y.¹ Fujita, S.² Hiramatsu, T.³ Matsuda, T.⁴ Furuta, M.⁵ Hirao, T.⁶

20
- 41649084966
- M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hosono Appl. Phys. Lett. 92 2008 133512
- (2008) Appl. Phys. Lett. , vol.92 , pp. 133512
- Kimura, M.¹ Nakanishi, T.² Nomura, K.³ Kamiya, T.⁴ Hosono, H.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.