SCOPUS 정보 검색 플랫폼

Volumn 22, Issue 39, 2012, Pages 21265-21271

A solution-processed yttrium oxide gate insulator for high-performance all-solution-processed fully transparent thin film transistors

(5) Song, Keunkyu a,b Yang, Wooseok a Jung, Yangho a Jeong, Sunho c Moon, Jooho a

a Yonsei University (South Korea)

b SAMSUNG Electronics (South Korea)

c Korea Research Institute of Chemical Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; ZINC OXIDE;

ANNEALING TEMPERATURES; CURRENT RATIOS; DEVICE PARAMETERS; ELECTRICAL ANALYSIS; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; FLEXIBLE DEVICE; GATE DIELECTRIC LAYERS; GATE INSULATOR; HIGH DIELECTRIC CONSTANTS; HIGH PERFORMANCE APPLICATIONS; INTERFACIAL QUALITIES; INTERFACIAL TRAPS; LOW TEMPERATURES; LOW VOLTAGE OPERATION; MICRO-STRUCTURAL; OXIDE DIELECTRIC; OXIDE THIN FILMS; SOLUTION-PROCESSED; TRANSPARENT OXIDES; TRANSPARENT THIN FILM TRANSISTOR;

DIELECTRIC MATERIALS;

EID: 84870472736 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm34162j Document Type: Article

Times cited : (111)

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