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Journal of Materials Chemistry C

Volumn 1, Issue 27, 2013, Pages 4275-4282

Solution-deposited Zr-doped AlOx gate dielectrics enabling high-performance flexible transparent thin film transistors

(5) Yang, Wooseok a Song, Keunkyu b Jung, Yangho b Jeong, Sunho c Moon, Jooho a

a Yonsei University (South Korea)

b SAMSUNG Electronics (South Korea)

c Korea Research Institute of Chemical Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; HIGH DIELECTRIC CONSTANTS; LOW THRESHOLD VOLTAGE; MECHANICAL FLEXIBILITY; PROCESSING TEMPERATURE; STRINGENT REQUIREMENT; THIN-FILM TRANSISTOR (TFTS); TRANSPARENT THIN FILM TRANSISTOR;

ALUMINA; DIELECTRIC MATERIALS; GATE DIELECTRICS; TEMPERATURE; THIN FILMS; ZIRCONIUM;

THIN FILM TRANSISTORS;

EID: 84879995126 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c3tc30550c Document Type: Article

Times cited : (126)

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