Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process

ACS Applied Materials and Interfaces

Volumn 4, Issue 8, 2012, Pages 4001-4005

  Kim, Deuk Jong ^a   Kim, Dong Lim ^a   Rim, You Seung ^a   Kim, Chul Ho ^a   Jeong, Woong Hee ^a   Lim, Hyun Soo ^a   Kim, Hyun Jae ^a  

^a Yonsei University   (South Korea)

Author keywords

density; effective channel thickness; multistacked active layer; porosity; solution process; thin film transistor

Indexed keywords

ACTIVE LAYER; CHANNEL THICKNESS; ELECTRICAL PERFORMANCE; FIELD-EFFECT MOBILITIES; FILM DENSITY; PERFORMANCE ENHANCEMENTS; POSITIVE BIAS; SOLUTION PROCESS; SUB-LAYERS; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

DENSITY (SPECIFIC GRAVITY); POROSITY; SEMICONDUCTING ORGANIC COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 84865219624     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am3008278     Document Type: Article

References (23)

1. Kwon, J.-Y.; Lee, D.-J.; Kim, K. B. Electron. Mater. Lett. 2011, 7, 1-11
2. Kamiya, T.; Nomura, K.; Hosono, H. Sci. Technol. Adv. Mater. 2010, 11, 044305
3. Hsieh, H.-H.; Lu, H.-H.; Ting, H.-C.; Chuang, C.-S.; Chen, C.-Y.; Lin, Y. J. Inf. Display 2010, 11, 160-164
4. Kim, G. H.; Shin, H. S.; Ahn, B. D.; Kim, K. H.; Park, W. J.; Kim, H. J. J. Electrochem. Soc. 2009, 156, H7-H9
5. Sirringhaus, H. Adv. Mater. 2005, 17, 2411-2425
6. Lee, D.-H.; Chang, Y.-J.; Herman, G. S.; Chang, C.-H. Adv. Mater. 2007, 19, 843-847
7. Lee, C.-G.; Dodabalapur, A. Appl. Phys. Lett. 2010, 96, 243501
8. Nomura, K.; Kamiya, T.; Hirano, M.; Hosono, H. Appl. Phys. Lett. 2009, 95, 013502
9. Lim, J. H.; Shim, J. H.; Choi, J. H.; Joo, J.; Park, K.; Jeon, H.; Moon, M. R.; Jung, D.; Kim, H.; Lee, H.-J. Appl. Phys. Lett. 2009, 95, 012108
10. Banger, K. K.; Yamashita, Y.; Mori, K.; Peterson, R. L.; Leedham, T.; Rickard, J.; Sirringhaus, H. Nat. Mater. 2011, 10, 45-50
11. Li, C.-S.; Li, Y.-J.; Wu, Y.; Ong, B.-S.; Loutfy, R.-O. J. Mater. Chem. 2009, 19, 1626-1634
12. Lee, D.-H.; Chang, Y.-J.; Stickle, W.; Chang, C.-H. J. Electrochem. Soc. 2007, 10, K51-K54
13. Park, J.-S.; Jeong, J. K.; Mo, Y.-G.; Kim, H. D.; Kim, C. J. Appl. Phys. Lett. 2008, 93, 033513
14. Barquinha, P.; Pimentel, A.; Marques, A.; Pereira, L.; Martins, R.; Fortunato, E. J. Non-Cryst. Solids 2006, 352, 1749-1752
15. Lee, S. Y.; Kim, D. H.; Chong, E. Y.; Jeon, W.; Kim, D. H. Appl. Phys. Lett. 2011, 98, 122105
16. Kang, D.; Lim, H.; Kim, C.; Song, I.; Park, J.; Chung, J.; Park, Y. Appl. Phys. Lett. 2007, 90, 192101
17. Wang, Y.; Sun, X. W.; Goh, G. K. L.; Demir, H. V.; Yu, H. Y. IEEE Trans. Electron Devices 2011, 58, 480-485
18. Jeong, J. K.; Yang, H. W.; Jeong, J. H.; Mo, Y.-G.; Kim, H. D. Appl. Phys. Lett. 2008, 93, 123508
19. Park, J.-S.; Jeong, J. K.; Chung, H.-J.; Mo, Y.-G.; Kim, H. D. Appl. Phys. Lett. 2008, 92, 072104
20. Oh, H.; Ko Park, S.-H.; Hwang, C.-S.; Yang, S. H.; Ryu, M. K. Appl. Phys. Lett. 2011, 99, 022105
21. Jeong, J. H.; Yang, H. W.; Park, J.-S.; Jeong, J. K.; Mo, Y.-G.; Kim, H. D.; Song, J.; Hwang, C. S. J. Electrochem. Soc. 2008, 11, H157-H159
22. Kwon, D. W.; Kim, J. H.; Chang, J. S.; Kim, S. W.; Kim, W. D.; Park, J. C.; Song, I. H.; Kim, C. J.; Jung, U. I.; Park, B. G. Appl. Phys. Lett. 2011, 98, 063502
23. Ahn, B. D.; Shin, H. S.; Kim, H. J.; Park, J.-S.; Jeong, J. K. Appl. Phys. Lett. 2008, 93, 203506