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Volumn 25, Issue 7, 2013, Pages 1042-1047

Erratum: Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997);Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors

Author keywords

metal oxides; sol gel process; solution process; thin film transistors; transparent

Indexed keywords

GATE DIELECTRICS; SOL-GEL PROCESS; THIN FILM TRANSISTORS; THIN FILMS; ZIRCONIA;

EID: 84874065016     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201402185     Document Type: Erratum
Times cited : (151)

References (43)
  • 1
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    • R. A. Street, Adv. Mat. 2009, 21, 2007-2022.
    • (2009) Adv. Mat. , vol.21 , pp. 2007-2022
    • Street, R.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.