Growth characteristics of atomic layer deposited TiO2 thin films on Ru and Si electrodes for memory capacitor applications

Journal of the Electrochemical Society

Volumn 152, Issue 8, 2005, Pages

  Kim, Wan Don ^a   Hwang, Gyu Weon ^a   Kwon, Oh Seong ^a   Kim, Seong Keun ^a   Cho, Moonju ^a   Jeong, Doo Seok ^a   Lee, Sang Woon ^a   Seo, Min Ha ^a   Hwang, Cheol Seong ^a   Min, Yo Sep ^b   Cho, Young Jin ^b  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRODEPOSITION; FILM GROWTH; NANOSTRUCTURED MATERIALS; PERMITTIVITY; POLYCRYSTALLINE MATERIALS; SUBSTRATES; TITANIUM DIOXIDE;

ATOMIC LAYER DEPOSITION; GROWTH TEMPERATURES; INCUBATION; PRECURSORS;

THIN FILMS;

EID: 25644443869     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1943589     Document Type: Article

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