Electric-field penetration into metals: consequences for high-dielectric-constant capacitors

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 776-780

  Black, Charles T ^a   Welser, Jeffrey J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BARIUM COMPOUNDS; CAPACITANCE; CAPACITORS; DIELECTRIC FILMS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRODES; MIM DEVICES; PERMITTIVITY; QUANTUM THEORY;

CAPACITANCE CORRECTION; CHARGE DISTRIBUTION; FINITE ELECTRONIC SCREENING; FINITE SPATIAL EXTENT; HIGH DENSITY MEMORY; THIN FILM HIGH DIELECTRIC CONSTANT CAPACITORS;

METALS;

EID: 0032623974     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753713     Document Type: Article

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