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Volumn 5, Issue 8, 2011, Pages 262-264
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Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents
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Author keywords
Atomic layer deposition; Iridium; TiO2
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Indexed keywords
CRYSTALLINE STRUCTURE;
DIELECTRIC CONSTANTS;
FEEDING TIME;
LEAKAGE PROPERTY;
OXYGEN SOURCES;
TIO;
ULTRALOW LEAKAGE;
ALUMINUM;
ATOMIC LAYER DEPOSITION;
ATOMS;
IRIDIUM;
LEAKAGE CURRENTS;
OXIDE MINERALS;
TITANIUM DIOXIDE;
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EID: 79961083396
PISSN: 18626254
EISSN: 18626270
Source Type: Journal
DOI: 10.1002/pssr.201105250 Document Type: Article |
Times cited : (13)
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References (12)
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