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Volumn 5, Issue 8, 2011, Pages 262-264

Atomic layer deposition of TiO2 and Al-doped TiO2 films on Ir substrates for ultralow leakage currents

Author keywords

Atomic layer deposition; Iridium; TiO2

Indexed keywords

CRYSTALLINE STRUCTURE; DIELECTRIC CONSTANTS; FEEDING TIME; LEAKAGE PROPERTY; OXYGEN SOURCES; TIO; ULTRALOW LEAKAGE;

EID: 79961083396     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105250     Document Type: Article
Times cited : (13)

References (12)
  • 2
  • 7
    • 47049096034 scopus 로고    scopus 로고
    • S. K. Kim et al., Adv. Mater. 20, 1429 (2008).
    • (2008) Adv. Mater. , vol.20 , pp. 1429
    • Kim, S.K.1
  • 9
    • 79961073175 scopus 로고    scopus 로고
    • IEEE Int. Electron Devices Meet.
    • I. S. Jeon et al., IEEE Int. Electron Devices Meet. 303 (2004).
    • (2004) , vol.303
    • Jeon, I.S.1
  • 10
  • 11
  • 12
    • 79961099575 scopus 로고
    • Quantum Theory of Solids, 2nd ed. (Wiley,).
    • C. Kittel, Quantum Theory of Solids, 2nd ed. (Wiley, 1987).
    • (1987)
    • Kittel, C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.