Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric

Microelectronics Reliability

Volumn 53, Issue 1, 2013, Pages 17-29

  Frank, T ^a,c   Moreau, S ^b   Chappaz, C ^a   Leduc, P ^b   Arnaud, L ^b   Thuaire, A ^b   Chery, E ^a   Lorut, F ^a   Anghel, L ^c   Poupon, G ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c TIMA LABORATORY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MECHANISM; DIELECTRIC BREAKDOWN TESTS; EXPECTED LIFETIME; METAL LEVELS; THROUGH-SILICON-VIA;

DEGRADATION; DIELECTRIC MATERIALS; RELIABILITY; THERMAL CYCLING;

ELECTROMIGRATION;

EID: 84872119562     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.021     Document Type: Article

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