Reliability of a 300-mm-compatible 3DI technology based on hybrid Cu-adhesive wafer bonding

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 170-171

  Yu, R R ^a   Liu, F ^a   Polastre, R J ^a   Chen, K N ^a   Liu, X H ^a   Shi, L ^a   Perfecto, E D ^b   Klymko, N R ^b   Chace, M S ^b   Shaw, T M ^a   Dimilia, D ^a   Kinser, E R ^b   Young, A M ^a   Purushothaman, S ^a   Koester, S J ^a   Haensch, W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESIVE WAFER BONDING; BONDING INTERFACES; HUMIDITY TESTS; INTERFACE BONDING STRENGTH; POST SI; RELIABILITY EVALUATION; TECHNOLOGY-BASED; THERMAL CYCLE;

SILICON WAFERS; TUNGSTEN; WAFER BONDING;

TECHNOLOGY;

EID: 71049131621     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. F. Liu, et al., IEDM 2008;
2. B.Vandevelde, et al., EuroSIM-E 2008;
3. R. Yu, ICEPT 2008.