Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

IBM Journal of Research and Development

Volumn 52, Issue 6, 2008, Pages 635-648

  Joseph, Alvin J ^a   Gillis, John D ^a   Doherty, Mark ^b   Lindgren, Peter J ^a   Previti Kelly, Rosemary A ^a   Malladi, Ramana M ^a   Wang, Ping Chuan ^a   Erturk, Mete ^a   Ding, Hanyi ^a   Gebreselasie, Ephrem G ^a   McPartlin, Michael J ^b   Dunn, James ^a  

^a IBM   (United States)

^b SiGe Semiconductor Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL ESTIMATION; ELECTRONICS PACKAGING; INDUCTANCE; INTEGRATED CIRCUIT INTERCONNECTS; MICROWAVE AMPLIFIERS; POWER AMPLIFIERS; SEMICONDUCTING SILICON; SILICON ALLOYS; WIMAX; WIRELESS TELECOMMUNICATION SYSTEMS;

HIGHER FREQUENCIES; LOW-COST PLASTICS; QUAD FLAT NO LEADS; RF PERFORMANCE; SIGE BICMOS TECHNOLOGY; SIGE POWER AMPLIFIERS; THROUGH SILICON VIAS; WIRELESS COMMUNICATIONS;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 61649121091     PISSN: 00188646     EISSN: 00188646     Source Type: Journal    
DOI: 10.1147/JRD.2008.5388563     Document Type: Article

References (19)

1. J. Rebello, "RF Components in Mobile Handsets: Driving Towards Increased Integration," Wireless Communications, December 2006; see http://www.isuppli.com/rptviewer/default.asp?a= 38179&cmd=inline.
2. P. Zampardi, "Performance and Modeling of Si and SiGe for Power Amplifiers," Proceedings of the Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Long Beach, CA, 2007, pp. 13-17.
3. J. B. Johnson, A. J. Joseph, D. C. Sheridan, R. M. Maladi, P.-O. Brandt, J. Persson, J. Andersson, et al., "Silicon-Germanium BiCMOS HBT Technology for Wireless Power Amplifier Applications," IEEE J. Solid State Circuits 39, No. 10, 1605-1614 (2004).
4. W. Bischof, M. Alles, S. Gerlach, A. Kruck, A. Schuppen, J. Sinderhauf, and H.-J. Wassener, "SiGe-Power Amplifiers in Flipchip and Packaged Technology," Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium, Phoenix, AZ, 2001, pp. 35-38.
5. D. L. Harame, D. C. Ahlgren, D. D. Coolbaugh, J. S. Dunn, G. G. Freeman, J. D. Gillis, R. A. Groves, et al., "Current Status and Future Trends of SiGe BiCMOS Technology," IEEE Trans. Electron Devices 48, No. 11, 2575-2594 (2001).
6. A. Joseph, Q. Liu, W. Hodge, P. Gray, K. Stein, R. Previti-Kelly, P. Lindgren, et al., "A 0.35 μm SiGe BiCMOS Technology for Power Amplifier Applications," Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Boston, MA, 2007, pp. 198-201.
7. Q. Z. Liu, B. A. Orner, L. Lanzerotti, M. Dahlstrom, W. Hodge, M. Gordon, J. Johnson, et al., "Collector Optimization in Advanced SiGe HBT Technologies," Proceedings of the IEEE Compound Semiconductor Integrated Circuits Symposium, Palm Springs, CA, 2005, pp. 117-120.
8. H. S. Bennett, R. Brederlow, J. C. Costa, P. E. Cottrell, W. M. Huang, A. A. Immorlica, Jr., J.-E. Mueller, et al., "Device and Technology Evolution for Si-Based RF Integrated Circuits," IEEE Trans. Electron Devices 52, No. 7, 1235-1258 (2005).
9. D. M. H. Hartskeerl, H. G. A. Huizing, P. Deixler, W. van Noort, and P. H. C. Magnee, "High Performance SiGeC HBT Integrated into a 0.25 μm BiCMOS Technology Featuring Record 88% Power-Added Efficiency," Proceedings of the IEEE MTT-S International Symposium, Ft. Worth, TX, 2004, pp. 979-982.
10. M. Maiore, G. Berretta, G. Conti, E. Pirrone, and C. Campisi, "A 63% PAE and 10:1 VSWR at 3.3 V Power Amplifier in 0.25 μm SiGe BiCMOS for DCS and PCS Applications," Proceedings of the IEEE Radio and Wireless Symposium, San Diego, CA, 2006, pp. 247-250.
11. Atmel Corporation (October 9, 2003). Atmel's New High-Speed SiGe Power Technology Available as Foundry Service. Press release; see http:// www.atmel.com/dyn/resources/press/foundryℐge2.html.
12. Global Communication Semiconductors, Inc.; see http:// www.gcsincorp.com/.
13. Northrop Grumman Microelectronic Device Technology, "Gallium Arsenide Foundry Services," 1998; see http:// www.es.northropgrumman.com/solutions/foundryservices/assets/ foundry.pdf.
14. R. M. Malladi, M. McPartlin, A. Joseph, H. Lafontaine, and M. Doherty, "Large Signal Modeling of High Efficiency SiGe HBTs for Power Amplifier Applications," Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Boston, MA, 2007, pp. 58-61.
15. F. Laermer and A. Urban, "Milestones in Deep Reactive Ion Etching," Proceedings of the 13th International Conference on Solid-State Sensors, Actuators and Microsystems, Seoul, Korea, 2005, pp. 1118-1121.
16. F. W. Grover, "Tables for the Calculation of the Inductance of Circular Coils of Rectangular Cross Section," Scientific Paper #455, Scientific Papers of the Bureau of Standards 18, 451-487 (1922).
17. R. G. Filippi, R. A. Wachnik, C.-P. Eng, D. Chidambarrao, P.-C. Wang, J. F. White, M. A. Korhonen, T. M. Shaw, R. Rosenberg, and T. D. Sullivan, "The Effect of Current Density, Stripe Length, Stripe Width, and Temperature on Resistance Saturation During Electromigration Testing," J. Appl. Phys. 91, No. 9, 5787-5795 (2002).
18. M. Elmala, J. Paramesh, and K. Soumyanath, "A 90-nm CMOS Doherty Power Amplifier with Minimum AM-PM Distortion," IEEE J. Solid-State Circuits 41, No. 6, 1323-1332 (2006).
19. S. Lloyd, "Challenges of Mobile WiMAX RF Transceivers," Proceedings of the 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 2006, pp. 1821-1824.