Resistance increase due to electromigration induced depletion under TSV

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Frank, T ^a,c   Chappaz, C ^a   Leduc, P ^b   Arnaud, L ^a,b   Lorut, F ^a   Moreau, S ^b   Thuaire, A ^b   El Farhane, R ^b   Anghel, L ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c TIMA LABORATORY   (France)

Author keywords

copper; electromigration; model; resistance trace; Through Silicon Via (TSV); void

Indexed keywords

ANALYTICAL MODEL; ELECTRICAL RESISTANCES; RESISTANCE INCREASE; THROUGH-SILICON-VIA; VOID;

MATHEMATICAL MODELS;

ELECTROMIGRATION;

EID: 79959293701     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784499     Document Type: Conference Paper

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