Evaluation of Cu diffusion from Cu through-silicon via (TSV) in three-dimensional LSI by transient capacitance measurement

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 940-942

  Bea, Jichel ^a   Lee, Kangwook ^a   Fukushima, Takafumi ^a   Tanaka, Tetsu ^a   Koyanagi, Mitsumasa ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

3 D LSI; Capacitancetime C t; charge carrier lifetime; Cu diffusion; Cu through silicon via (TSV)

Indexed keywords

3-D LSI; ACTIVE AREA; BARRIER LAYERS; C-T CURVE; CAPACITANCETIME C-T; CU ATOMS; CU DIFFUSION; DEVICE RELIABILITY; GATE TRENCHES; GENERATION LIFETIME; MINORITY CARRIER; TRENCH CAPACITORS;

CAPACITANCE MEASUREMENT; CAPACITORS; CARRIER LIFETIME; POWER QUALITY; RELIABILITY ANALYSIS; THREE DIMENSIONAL;

SILICON WAFERS;

EID: 79959790622     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2141109     Document Type: Article

References (7)

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