Modeling of electromigration of the through silicon via interconnects

Proceedings - 2010 11th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2010

Volumn , Issue , 2010, Pages 1221-1225

  Chen, Zhaohui ^a   Lv, Zhicheng ^b,c   Wang, Xue Fang ^b,c   Liu, Yong ^b,d   Liu, Sheng ^a,b,c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^d FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3-D PACKAGES; ATOMIC CONCENTRATION; ATOMIC DISTRIBUTION; COPPER ATOMS; CURRENT CROWDING; DESIGN AND APPLICATION; FAILURE MECHANISM; FEM MODELS; FINITE ELEMENT MODELS; HIGH CURRENT DENSITIES; HYDROSTATIC STRESS; MASS DIFFUSION; NUMERICAL CALCULATION; NUMERICAL EXPERIMENTS; STRESS MIGRATION; THERMOMIGRATION; THROUGH-SILICON-VIA; VON MISES;

ATOMS; COMPUTER SIMULATION; COPPER; ELECTROMIGRATION; ELECTRONICS PACKAGING; EXPERIMENTS; FINITE ELEMENT METHOD; HYDRAULICS; HYDRODYNAMICS; PACKAGING; STRESS CONCENTRATION; STRUCTURAL DESIGN;

CRYSTAL ATOMIC STRUCTURE;

EID: 78449279451     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEPT.2010.5582771     Document Type: Conference Paper

References (9)

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9. Darveaux, R., "Effect of simulation methodology on solder joint crack growth correlation and fatigue life prediction," ASME Journal of Electronic Package, Vol.124, 2002, pp. 147-152.