Reliability approach of high density Through Silicon Via (TSV)

2010 12th Electronics Packaging Technology Conference, EPTC 2010

Volumn , Issue , 2010, Pages 321-324

  Frank, Thomas ^a,c   Chappaz, Cédrick ^a   Leduc, Patrick ^b   Arnaud, Lucile ^a,b   Moreau, Stéphane ^b   Thuaire, Aurélie ^b   El Farhane, Rebha ^b   Anghel, Lorena ^c  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c TIMA LABORATORY   (France)

Author keywords

Electromigration; Failure criterion; Reliability; Thermal cycling; Through Silicon Via (TSV); Void

Indexed keywords

A-CARBON; ELECTRICAL RESISTANCES; FAILURE CRITERIA; FAILURE CRITERION; HIGH DENSITY; PHYSICAL ANALYSIS; RELIABILITY APPROACH; THERMAL CYCLING TEST; THROUGH-SILICON-VIA; TIME TO FAILURE; VOID;

ELECTRIC RESISTANCE; ELECTROMIGRATION; ELECTRONICS PACKAGING; THERMAL CYCLING;

RELIABILITY;

EID: 79951904993     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPTC.2010.5702655     Document Type: Conference Paper

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