Numerical analysis of thermo-mechanical reliability of through silicon vias (TSVs) and solder interconnects in 3-dimensional integrated circuits

Microelectronic Engineering

Volumn 87, Issue 2, 2010, Pages 208-215

  Ladani, Leila J ^a  

^a Utah State University   (United States)

Author keywords

3D ICs; Durability; Finite element; Through silicon vias

Indexed keywords

3-DIMENSIONAL; 3D ICS; ACCELERATED THERMAL CYCLES; ACTIVE LAYER; ANALYTICAL APPROACH; COFFIN-MANSON; CONTINUUM DAMAGE MODEL; COPPER INTERCONNECTS; DESIGN PARAMETERS; DIRECT CHIP ATTACH; FATIGUE LIFE; FINITE ELEMENT; GENERAL LINEAR MODEL ANALYSIS; IC PACKAGE; IC PACKAGING; INFLUENTIAL FACTORS; INTERLAYER BONDING; ISOTROPIC HARDENINGS; MINITAB; NON-LINEAR RESPONSE; NUMBER OF CYCLES TO FAILURE; NUMERICAL EXPERIMENTS; OPTIMIZING DESIGN; OPTIMUM DESIGNS; ORTHOGONAL ARRAY; PLASTIC MATERIALS; SILICON LAYER; SOLDER INTERCONNECTS; SOLDER JOINTS; THERMO-MECHANICAL DURABILITY; THERMOMECHANICAL RELIABILITY; THREE DIMENSIONAL INTEGRATED CIRCUITS; THROUGH SILICON VIAS; THROUGH-SILICON-VIA; UNDERFILL PROPERTIES; UNDERFILLS;

COMPUTER CRIME; DESIGN; DIES; DURABILITY; ELECTRONICS PACKAGING; EXPERIMENTS; INTEGRATED CIRCUITS; INTERCONNECTION NETWORKS; LARGE SCALE SYSTEMS; MECHANICAL PROPERTIES; OPTICAL INTERCONNECTS; REGRESSION ANALYSIS; RELIABILITY ANALYSIS; THERMOMECHANICAL TREATMENT;

THREE DIMENSIONAL;

EID: 70450233523     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.07.022     Document Type: Article

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