Modeling thermal stresses in 3-D IC interwafer interconnects

IEEE Transactions on Semiconductor Manufacturing

Volumn 19, Issue 4, 2006, Pages 437-448

  Zhang, Jing ^a,b   Bloomfield, Max O ^a   Lu, Jian Qiang ^a   Gutmann, Ronald J ^a   Cale, Timothy S ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b University of Alaska Fairbanks   (United States)

Author keywords

Benzocyclobutene (BCB); Cu; Interwafer vias; Low k dielectronics; Thermo mechanical stresses; Three dimensional (3 D) ICs

Indexed keywords

COMPUTER SIMULATION; COPPER; DIELECTRIC MATERIALS; FINITE ELEMENT METHOD; INTEGRATED CIRCUITS; X RAY DIFFRACTION;

BENZOCYCLOBUTENE (BCB); INTERWAFER VIAS; LOW-K DIELECTRONICS; THERMOMECHANICAL STRESSES; THREE DIMENSIONAL (3-D) IC;

INTERCONNECTION NETWORKS;

EID: 33751547867     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2006.883587     Document Type: Conference Paper

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