The effect of oxygen on the work function of tungsten gate electrodes in MOS devices

IEEE Electron Device Letters

Volumn 30, Issue 9, 2009, Pages 925-927

  Grubbs, Melody E ^a   Deal, Michael ^a   Nishi, Yoshio ^a   Clemens, Bruce M ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

Oxygen; Tungsten; Work function

Indexed keywords

EFFECT OF OXYGEN; FORMING GAS; GATE ELECTRODES; OXYGEN CONCENTRATIONS; OXYGEN CONTENT; PARTIAL PRESSURE OF OXYGEN; TUNGSTEN ELECTRODES; TUNGSTEN FILMS; UNIFORM TRANSFORMATIONS; WORK FUNCTION TUNING;

ELECTRODES; MOS CAPACITORS; PHASE INTERFACES; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; TUNGSTEN; WORK FUNCTION;

OXYGEN;

EID: 69949170474     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2026717     Document Type: Article

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