Role of interface reaction on resistive switching of metal/amorphous TiO2/Al RRAM devices

Journal of the Electrochemical Society

Volumn 158, Issue 10, 2011, Pages

  Young Jeong, Hu ^a,d   Kyu Kim, Sung ^b   Yong Lee, Jeong ^b   Choi, Sung Yool ^c  

^a Korea Advanced Institute of Science & Technology   (South Korea)

^b Department of Materials Science and Engineering ^*  (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Ulsan National Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS TIO; DEVICE PERFORMANCE; DIFFUSION KINETICS; HEAT OF FORMATION; INTERFACE REACTIONS; INTERFACIAL LAYER; MEMORY PERFORMANCE; METAL ELECTRODES; OXYGEN AFFINITY; OXYGEN IONS; RESISTIVE SWITCHING; TIO; TITANIUM OXIDE LAYER;

ELECTRON AFFINITY; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OXYGEN; RANDOM ACCESS STORAGE; SWITCHING SYSTEMS; THERMOCHEMISTRY; THERMODYNAMICS; TITANIUM; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM;

EID: 80052092308     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3622295     Document Type: Article

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