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Volumn 111, Issue 10, 2012, Pages

Threshold resistive and capacitive switching behavior in binary amorphous GeSe

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CAPACITIVE SWITCHING; ELECTRONIC CARRIERS; ELECTRONIC MECHANISMS; EXPERIMENTAL OBSERVATION; NONTHERMAL; THERMAL MECHANISMS; THRESHOLD SWITCHING;

EID: 84862143790     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4714705     Document Type: Conference Paper
Times cited : (37)

References (19)
  • 6
    • 36049053305 scopus 로고
    • 10.1103/PhysRevLett.21.1450
    • S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968). 10.1103/PhysRevLett. 21.1450
    • (1968) Phys. Rev. Lett. , vol.21 , pp. 1450
    • Ovshinsky, S.R.1
  • 7
  • 9
    • 84916438464 scopus 로고
    • 10.1080/00107516908220104
    • N. F. Mott, Contemp. Phys. 10, 125 (1969). 10.1080/00107516908220104
    • (1969) Contemp. Phys. , vol.10 , pp. 125
    • Mott, N.F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.