Performance and reliability of advanced High-K/Metal gate stacks (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1609-1614

  Garros, X ^a   Casse, M ^a   Reimbold, G ^a   Rafik, M ^b   Martin, F ^a   Andrieu, F ^a   Cosnier, V ^b   Boulanger, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Dipoles; High K dielectrics; Hole traps; Interface defects Nit; Metal gate; Mobility degradation; Negative Bias Temperature Instabilities NBTI; Nitrogen; Remote coulomb scattering

Indexed keywords

DIPOLES; HIGH-K DIELECTRICS; INTERFACE DEFECTS NIT; METAL GATE; MOBILITY DEGRADATION; NEGATIVE BIAS TEMPERATURE INSTABILITIES NBTI; REMOTE COULOMB SCATTERING;

DEFECTS; DEGRADATION; DIELECTRIC MATERIALS; GATE DIELECTRICS; HOLE TRAPS; NEGATIVE TEMPERATURE COEFFICIENT; NITROGEN; RELIABILITY; THERMODYNAMIC STABILITY;

HOLE MOBILITY;

EID: 67349137163     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.100     Document Type: Article

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