Analysis of electron mobility in HfO2 /TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Negara, M A ^a   Cherkaoui, K ^a   Hurley, P K ^a   Young, C D ^b   Majhi, P ^c   Tsai, W ^c   Bauza, D ^d   Ghibaudo, G ^d  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b SEMATECH   (United States)

^c INTEL CORPORATION   (United States)

^d IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; MOSFET DEVICES; PH EFFECTS; PHONONS; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS; TEMPERATURE DISTRIBUTION; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE; TRANSISTORS;

BIAS-TEMPERATURE STRESS; COULOMB POTENTIALS; COULOMB SCATTERINGS; EXPERIMENTAL DATUM; INTERFACE STATE DENSITIES; INVERSION CHARGES; MOSFETS; OXIDE CHARGES; PHONON-SCATTERING MECHANISMS; PHYSICAL THICKNESS; RELATIVE CONTRIBUTIONS; SURFACE ROUGHNESS SCATTERINGS; TEMPERATURE DEPENDENCES; TIN GATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 59349093222     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3068367     Document Type: Article

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