Monte carlo study of mobility in Si devices with HfO2-based oxides

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 995-999

  Ferrari, Giulio ^a   Watling, J R ^a   Roy, S ^a   Barker, J R ^a   Zeitzoff, P ^b   Bersuker, G ^b   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b SEMATECH   (United States)

Author keywords

High ; Mobility; Monte Carlo simulation

Indexed keywords

CAPACITANCE; CARRIER MOBILITY; COMPUTER SIMULATION; MONTE CARLO METHODS; MOSFET DEVICES; PERMITTIVITY; SILICA;

GATE CAPACITANCE; OPTICAL PHONONS; OXINITRIDES; THICKER GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 33846080610     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.035     Document Type: Article

References (15)

1. SEMATECH. 〈http://public.itrs.net〉, 2005.
2. Watling J.R., Yang L., Boriçi M., Barker J.R., and Asenov A. J Comput Electron 2 (2003) 475
3. Boriçi M., Watling J.R., Wilkins R., Yang L., and Barker J.R. J Comput Electron 2 (2003) 163
4. Jacoboni C., and Reggiani L. Rev Mod Phys 55 (1983) 645
5. Takagi S., Toriumi A., Iwase M., and Tango H. IEEE Trans Electron Dev 41 (1994) 2357
6. Goodnick S.M., Ferry D.K., Wilmsen C.W., Liliental Z., Fathy D., and Krivanek O.L. Phys Rev B 32 (1985) 8171
7. Wilk G.D., Wallace R.M., and Anthony J.M. J Appl Phys 89 (2001) 5243
8. Fischetti M.V., Neumayer D.A., and Cartier E.A. J Appl Phys 90 (2001) 4587
9. Solomon PM, Yang M. IEDM 04 technical digest, vol. 143, 2004.
10. Kirsch P, Sim J, Song S, Krishnan S, Peterson J, Li H, et al. ESSDERC 05 proceedings, vol. 367, 2005.
11. Ragnarsson LA, Severi S, Trojman L, Brunco DP, Johnson KD, Delabie A, et al. VLSI 05 proceedings, vol. 234, 2005.
12. Evans MH, Caussanel M, Schrimpf RD, Pantelides ST. IEDM 05 technical digest, vol. 611, 2005.
13. Brown AR, Watling JR, Asenov A, Bersuker G, Zeitzoff P. SISPAD 05 proceedings, 2005.
14. Harrison J.W., and Hauser J.R. J Appl Phys 47 (1976) 292
15. Vegard L. Z Phys 5 (1921) 17