The effects of nitrogen and silicon profile on high-K MOSFET performance and bias temperature instability

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 214-215

  Choi, Changhwan ^a   Kang, C S ^a   Kang, C Y ^a   Choi, R ^a   Cho, H J ^a   Kim, Y H ^a   Rhee, S J ^a   Akbar, M ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; MAGNETRON SPUTTERING; NITROGEN; OXIDES; SILICON COMPOUNDS; TEMPERATURE CONTROL;

BIAS TEMPERATURE; EQUIVALENT OXIDE THICKNESS (EOT); GATE DIELECTRICS; TEMPERATURE INSTABILITY;

CMOS INTEGRATED CIRCUITS;

EID: 4544357684     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. C. S Kang et al., Symp. VLSI Tech., p.146, 2002.
2. A. Rotondaro et al., Symp. VLSI Tech., p148, 2002.
3. S. Tsujikawa et al., IRPS, p183, 2003.
4. A. Shanware et al., IRDM Tech. Dig., 38.6, 2003
5. K. Onishi et al., IEEE Trans. Elec. Dev., vol. 50, p. 1517, 2003.