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Microelectronic Engineering

Volumn 88, Issue 6, 2011, Pages 950-958

Electrical characteristics and TDDB breakdown mechanism of N 2-RTA-treated Hf-based high-κ gate dielectrics

(4) Lin, Cheng Li a Chou, Mei Yuan a Kang, Tsung Kuei a Wu, Shich Chuan b

a FENG CHIA UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

Breakdown mechanism; HfO2; HfSiOx; high gate dielectric; Oxide trap; RTA treatment; TDDB reliability

Indexed keywords

BREAKDOWN MECHANISM; HFO2; HFSIOX; OXIDE TRAP; RTA TREATMENT; TDDB RELIABILITY;

DIELECTRIC FILMS; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN BOUNDARIES; HAFNIUM; HAFNIUM COMPOUNDS; OPTIMIZATION; OXIDE FILMS; OXYGEN; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RELIABILITY;

OXYGEN VACANCIES;

EID: 79952407308 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2010.12.028 Document Type: Article

Times cited : (18)

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