Semiclassical modeling of quasi-ballistic hole transport in nanoscale pMOSFETs based on a multi-subband monte carlo approach

IEEE Transactions on Electron Devices

Volumn 56, Issue 9, 2009, Pages 2081-2091

  De Michielis, Marco ^a   Esseni, David ^a   Palestri, Pierpaolo ^a   Selmi, Luca ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

Hole inversion layer; Multi subband Monte Carlo; P MOSFETs; Quasi ballistic hole transport; Semi classical modelling

Indexed keywords

HOLE INVERSION LAYER; MULTI-SUBBAND MONTE CARLO; P-MOSFETS; QUASI-BALLISTIC HOLE TRANSPORT; SEMI-CLASSICAL MODELLING;

BALLISTICS; DISPERSIONS; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; SIMULATORS;

MOSFET DEVICES;

EID: 69549097503     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2026388     Document Type: Article

References (48)

1. M. Yang, V. W. C. Chan, K. K. Chan, L. Shin, D. M. Fried, J. H. Stathis, A. I. Chou, E. Gusev, J. A. Ott, L. E. Burns, M. V. Fischetti, and M. Ieong, "Hybrid-orientation technology (HOT): Opportunities and challenges," IEEE Trans. Electron Devices, vol. 53, no. 5, pp. 965-978, May 2006.
2. 2/TiN gate stack," IEEE Trans. Electron Devices vol. 53, no. 3, pp. 449-455, Mar. 2006.
3. T. Low, Y. T. Hou, M. F. Li, C. Zhu, A. Chin, G. Samudra, L. Chan, and D. L. Kwong, "Investigation of performance limits of germanium double-gated MOSFETs," in IEDM Tech. Dig., 2003, pp. 29.4.1-29.4.4.
4. S. E. Laux, "Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment," in IEDM Tech. Dig., 2004, pp. 135-138.
5. A. Rahman, G. Klimeck, and M. Lundstrom, "Novel channel materials for ballistic nanoscale MOSFETs - Bandstructure effects," in IEDM Tech. Dig., 2005, pp. 615-618.
6. A. Pethe, T. Krishnamohan, D. Kim, S. Oh, H. S. P. Wong, Y. Nishi, and K. C. Saraswat, "Investigation of the performance limits of III-V double-gate n-MOSFETs," in IEDM Tech. Dig., 2005, pp. 605-608.
7. M. De Michielis, D. Esseni, and F. Driussi, "Analytical models for the insight into the use of alternative channel materials in ballistic nano-MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 1, pp. 115-123, Jan. 2007.
8. J. Welser, J. L. Hoyt, S. Takagi, and F. Gibbons, "Strain dependence of the performance enhancement in strained-Si n-MOSFETs," in IEDM Tech. Dig., 1994, pp. 373-376.
9. K. Rim, J. L. Hoyt, and F. Gibbons, "Fabrication and analysis of deep submicron strained-Si n-MOSFETs," IEEE Trans. Electron Devices, vol. 47, no. 7, pp. 1406-1415, Jul. 2000.
10. T. Mizuno, N. Sugiyama, T. Tezuka, T. Numata, and S. Takagi, "High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology," IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 988-994, Apr. 2003.
11. T. Mizuno, N. Sugiyama, T. Tezuka, Y. Moriyama, S. Nakaharai, and S. Takagi, "[110]-surface strained-SOI CMOS devices," IEEE Trans. Electron Devices, vol. 52, no. 3, pp. 367-374, Mar. 2005.
12. D. Esseni, P. Palestri, and L. Selmi, "Transport in deca-nanometric MOSFETs: From bandstructure to on-currents," in IEDM Tech. Dig., 2006, pp. 933-936.
13. D. K. Ferry, R. Akis, and D. Vasileska, "Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices," in IEDM Tech. Dig., 2000, pp. 287-290.
14. H. Tsuchiya, B. Fischer, and K. A. Hess, "A full-band Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction potential," in IEDM Tech. Dig., 2000, pp. 283-286.
15. B. Winstead and U. Ravaioli, "A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 440-446, Feb. 2003.
16. P. Palestri, S. Eminente, D. Esseni, C. Fiegna, E. Sangiorgi, and L. Selmi, "An improved semi-classical Monte Carlo approach for nanoscale MOSFET simulation," Solid State Electron., vol. 49, no. 5, pp. 727-732, May 2005.
17. L. Lucci, P. Palestri, D. Esseni, and L. Selmi, "Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration," in IEDM Tech. Dig., 2005, pp. 631-634.
18. J. S. Martin, A. Bournel, F. Monsef, C. Chassat, and P. Dollfus, "Multi-subband Monte Carlo simulation of ultrathin double gate MOSFET with 2-D electron gas," Semicond. Sci. Technol., vol. 21, no. 4, pp. 29-31, 2006.
19. M. V. Fischetti and S. E. Laux, "Monte Carlo study of electron transport in silicon inversion layers," Phys. Rev. B, Condens. Matter, vol. 48, no. 4, pp. 2244-2274, Jul. 1993.
20. C. Sampedro, F. Gamiz, A. Godoy, R. Valin, and A. Garcia-Loureiro, "Multi-subband Monte Carlo study of device orientation effects in ultrashort channel DGSOI," in Proc. EUROSOI, 2009, pp. 53-54.
21. M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, "Six-band k · p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness," J. Appl. Phys., vol. 94, no. 2, pp. 1079-1095, Jul. 2003.
22. E. Wang, P. Montagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, M. Stettler, and M. G. Giles, "Physics of hole transport in strained silicon MOSFET inversion layers," IEEE Trans. Electron Devices, vol. 53, no. 8, pp. 1840-1850, Aug. 2006.
23. R. Oberhuber, G. Zandler, and P. Vogl, "Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs," Phys. Rev. B, Condens. Matter, vol. 58, no. 15, pp. 9941-9948, Oct. 1998.
24. A. Pham, C. Jungemann, and B. Meinerzhagen, "Modeling of hole inversion layer mobility in unstrained and uniaxially strained Si on arbitrarily oriented substrates," in Proc. Eur. Solid State Device Res. Conf. 2007, pp. 390-393.
25. L. Donetti, F. Gamiz, A. Godoy, and N. Rodriguez, "Fully self-consistent k · p solver andMonte Carlo simulator for hole inversion layers," in Proc. Eur. Solid State Device Res. Conf., 2008, pp. 254-257.
26. B. Ghosh, X. Wang, X. Fan, L. F. Register, and S. K. Banerjee, "Monte Carlo study of germanium n- and pMOSFETs," IEEE Trans. Electron Devices, vol. 52, no. 4, pp. 547-553, Apr. 2005.
27. F. M. Bufler, A. Tsibizov, and A. Erlebach, "Scaling of bulk pMOSFETs: (110) surface orientation versus uniaxial compressive stress," IEEE Electron Device Lett., vol. 27, no. 12, pp. 992-994, Dec. 2006.
28. A. T. Pham, C. Jungemann, and B. Meinerzhagen, "Deterministic multi-subband device simulations for strained double gate PMOSFETs including magnetotransport," in IEDM Tech. Dig., 2008, pp. 895-898.
29. A. Pirovano, A. L. Lacaita, G. Zandler, and R. Oberhuber, "Explaining the dependences of the hole and electron mobilities in Si inversion layers," IEEE Trans. Electron Devices, vol. 47, no. 4, pp. 718-724, Apr. 2000.
30. M. De Michielis, D. Esseni, Y. L. Tsang, P. Palestri, L. Selmi, G. O'Neill, and S. Chattopadhyay, "A semianalytical description of the hole band structure in inversion layers for the physically based modeling of pMOS transistors," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2164-2173, Sep. 2007.
31. L. Lucci, P. Palestri, D. Esseni, L. Bergagnini, and L. Selmi, "Multi-subband Monte Carlo study of transport, quantization, and electron-gas degeneration in ultrathin SOI n-MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 5, pp. 1156-1164, May 2007.
32. P. Palestri, N. Barin, D. Esseni, and C. Fiegna, "Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations," IEEE Trans. Electron Device, vol. 53, no. 6, pp. 1443-1451, Jun. 2006.
33. T. Ando, A. Fowler, and F. Stern, "Electronic properties of two-dimensional systems," Rev. Mod. Phys., vol. 54, no. 2, pp. 437-673, Apr. 1982.
34. F. Conzatti, M. De Michielis, D. Esseni, and P. Palestri, "Drain current improvements in uniaxially strained p-MOSFETs: A multi-subband Monte Carlo study," Solid State Electron., vol. 53, no. 7, pp. 706-711, 2009.
35. I. Riolino, M. Braccioli, L. Lucci, P. Palestri, D. Esseni, C. Fiegna, and L. Selmi, "Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections," Solid State Electron., vol. 51, no. 11/12, pp. 1558-1564, Nov./Dec. 2007.
36. D. Esseni and A. Abramo, "Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 7, pp. 1665-1674, Jul. 2003.
37. D. Esseni, A. Abramo, L. Selmi, and E. Sangiorgi, "Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 12, pp. 2445-2455, Dec. 2003.
38. D. Esseni, "On the modeling of surface roughness limited mobility in SOI MOSFETs and its correlation to the transistor effective field," IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 394-401, Mar. 2004.
39. D. K. Ferry and S. M. Goodnick, Transport in Nanostructures. Cambridge, U.K.: Cambridge Univ. Press, 1997.
40. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, no. 3, pp. 645-705, Jul. 1983.
41. G. Ottaviani, L. Reggiani, C. Canali, F. Nava, and A. A. Quaranta, "Hole drift velocity in silicon," Phys. Rev. B, Condens. Matter, vol. 12, no. 8, pp. 3318-3329, Oct. 1975.
42. W. A. Harrison, "Scattering of electrons in lattice vibrations in nonpolar crystals," Phys. Rev., vol. 104, no. 5, pp. 1281-1290, 1956.
43. C. Jungemann, A. Edmunds, and W. L. Engl, "Simulation of linear and nonlinear electron transport in homogeneous silicon inversion layers," Solid State Electron., vol. 36, no. 11, pp. 1529-1540, Nov. 1993.
44. T. Ando, "Screening effect and quantum transport in a silicon inversion layer in strong magnetic field," J. Phys. Soc. Jpn., vol. 43, no. 5, pp. 1616-1626, Nov. 1977.
45. S. Jin, M. V. Fischetti, and T. Tang, "Modeling of surface-roughness scattering in ultrathin-body SOI MOSFETs," IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2191-2203, Sep. 2007.
46. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFETs - Part 1: Effect of substrate impurity concentration," IEEE Trans. Electron Devices, vol. 41, no. 12, pp. 2357-2362, Dec. 1994.
47. International Technology Roadmap for Semiconductors: 2006 Update, 2006. [Online]. Available: Www.itrs.net/Links/2006Update/FinalToPost/ 04_PIDS2006Update.pdf
48. S. Eminente, D. Esseni, P. Palestri, C. Fiegna, L. Selmi, and E. Sangiorgi, "Understanding quasi-ballistic transport in nano-MOSFETs - Part 2: Technology scaling along the ITRS roadmap," IEEE Trans. Electron Devices, vol. 52, no. 12, pp. 2736-2743, Dec. 2005.