Dipole controlled metal gate with hybrid low resistivity cladding for gate-last CMOS with low Vt

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2010, Pages 183-184

  Hinkle, C L ^a   Galatage, R V ^a   Chapman, R A ^a   Vogel, E M ^a   Alshareef, H N ^b   Freeman, C ^c   Wimmer, E ^c   Niimi, H ^d   Li Fatou, A ^d   Shaw, J B ^d   Chambers, J J ^d  

^a The University of Texas at Dallas   (United States)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^c Materials Design Inc   (United States)

^d TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CLADDING LAYER; EFFECTIVE WORK FUNCTION; FIRST-PRINCIPLES CALCULATION; GATE-LAST; LOW OXYGEN; LOW RESISTIVITY; MATERIALS AND PROCESS; METAL GATE; OXYGEN CONCENTRATIONS;

OXYGEN; TITANIUM NITRIDE;

CLADDING (COATING);

EID: 77957862779     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2010.5556220     Document Type: Conference Paper

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