A study on mobility degradation in nMOSFETs with HfO2 based gate oxide

Materials Science and Engineering: B

Volumn 165, Issue 1-2, 2009, Pages 129-131

  Hyvert, G ^a   Nguyen, T ^a   Militaru, L ^a   Poncet, A ^a   Plossu, C ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Electron mobility; Hafnium oxide; Low field transport; Phonon electron interaction; Remote coulomb scattering interaction

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON MOBILITY; ELECTRONS; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH-K DIELECTRIC; LOGIC GATES; MOSFET DEVICES; SILICA;

FIELD TRANSPORT; GATE OXIDE; LOW FIELD; LOW FIELD TRANSPORT; MOBILITY DEGRADATION; NMOSFETS; PHONON-ELECTRON INTERACTION; REMOTE COULOMB SCATTERING INTERACTION; REMOTE COULOMB SCATTERINGS; SCATTERING INTERACTIONS;

HAFNIUM OXIDES;

EID: 71749091271     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.02.016     Document Type: Review

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